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Incorporation of polar side chains on organic semiconducting materials have been used recently in thermoelectric materials to increase dopant:semiconductor miscibility and stability to further increase the performance and durability of devices. However, investigations into how polar side chains can affect the structure and energetics of polythiophenes compared to non-polar alkyl side chains are usually carried out using materials with no common morphological structure. Within this work we systematically investigate the increase in polar side chain content on poly(3-hexylthiophene) (P3HT) and how the optical, electrochemical, and structural properties are affected. We find a decreasing degree of aggregation with increasing polar side chain content leading to lower charge carrier mobilities. Upon doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), we find that the electrical conductivity is reduced when incorporating the polar side chain and no stabilising effect is demonstrated when annealing the doped thin films at raised temperatures. This study emphasises that polar functionalities do not always increase dopant:semiconductor interactions and can harm desirable structural and electrical characteristics, and therefore should be incorporated into organic semiconductors with caution. 

N-type semiconducting polymers have been recently utilized in thermoelectric devices, however they have typically exhibited low electrical conductivities and poor device stability, in contrast to p-type semiconductors, which have been much higher performing. This is due in particular to the n-type semiconductor's low doping efficiency, and poor charge carrier mobility. Strategies to enhance the thermoelectric performance of n-type materials include optimizing the electron affinity (EA) with respect to the dopant to improve the doping process and increasing the charge carrier mobility through enhanced molecular packing. Here, we report the design, synthesis and characterization of fused electron-deficient n-type copolymers incorporating the electron withdrawing lactone unit along the backbone. The polymers were synthesized using metal-free aldol condensation conditions to explore the effect of enlarging the central phenyl ring to a naphthalene ring, on the electrical conductivity. When n-doped with N-DMBI, electrical conductivities of up to 0.28 S cm −1 , Seebeck coefficients of −75 μV K −1 and maximum Power factors of 0.16 μW m −1 K −2 were observed from the polymer with the largest electron affinity of −4.68 eV. Extending the aromatic ring reduced the electron affinity, due to reducing the density of electron withdrawing groups and subsequently the electrical conductivity reduced by almost two orders of magnitude. 

Organic semiconductors with distinct molecular properties and large carrier mobilities are constantly developed in attempt to produce highly‐efficient electronic materials. Recently, designer molecules with unique structural modifications have been expressly developed to suppress molecular motions in the solid state that arise from low‐energy phonon modes, which uniquely limit carrier mobilities through electron–phonon coupling. However, such low‐frequency vibrational dynamics often involve complex molecular dynamics, making comprehension of the underlying electronic origins of electron–phonon coupling difficult. In this study, first a mode‐resolved picture of electron–phonon coupling in a series of materials that are specifically designed to suppress detrimental vibrational effects, is generated. From this foundation, a method is developed based on the crystalline orbital Hamiltonian population (COHP) analyses to resolve the origins—down to the single atomic‐orbital scale—of surprisingly large electron–phonon coupling constants of particular vibrations, explicitly detailing the manner in which the intermolecular wavefunction overlap is perturbed. Overall, this approach provides a comprehensive explanation into the unexpected effects of less‐commonly studied molecular vibrations, revealing new aspects of molecular design that should be considered for creating improved organic semiconducting materials.

 

Molecular doping—the use of redox‐active small molecules as dopants for organic semiconductors—has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox‐active character of these materials. A recent breakthrough was a doping technique based on ion‐exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno(3,2‐b)thiophene) (PBTTT) doped with FeCl₃and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm⁻¹and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl₃, are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.